AONS1R6A70

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Alpha & Omega Semiconductor Inc.

MOSFET N-CH 700V 1.1A/4.6A 8DFN

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Alpha & Omega Semiconductor Inc.

MOSFET N-CH 700V 1.1A/4.6A 8DFN

Technical Specifications

Parameters and characteristics for this part

Specification	AONS1R6A70

Current - Continuous Drain (Id) @ 25°C	4.6 A, 1.1 A
Drain to Source Voltage (Vdss)	700 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	8 nC
Input Capacitance (Ciss) (Max) @ Vds	354 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerVDFN
Power Dissipation (Max)	4.1 W, 78 W
Rds On (Max) @ Id, Vgs	1.6 Ohm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	3.5 V

Part	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Technology	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Vgs (Max)	FET Type	Mounting Type	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)
Alpha & Omega Semiconductor Inc. AONS1R6A70	4.1 W 78 W	10 V	MOSFET (Metal Oxide)	1.1 A 4.6 A	-55 °C	150 °C	354 pF	8-PowerVDFN	8 nC	1.6 Ohm	30 V	N-Channel	Surface Mount	3.5 V	700 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 700 V 1.1A (Ta), 4.6A (Tc) 4.1W (Ta), 78W (Tc) Surface Mount 8-DFN-EP (5x6)

Technical documentation and resources