VS-36MT80

Active

Vishay General Semiconductor - Diodes Division

BRIDGE RECT 3PHASE 800V 35A D-63

Search across all available documentation for this part.

Active

Vishay General Semiconductor - Diodes Division

BRIDGE RECT 3PHASE 800V 35A D-63

Technical Specifications

Parameters and characteristics for this part

Specification	VS-36MT80

Current - Average Rectified (Io)	35 A
Current - Reverse Leakage @ Vr	10 µA
Diode Type	Three Phase
Mounting Type	QC Terminal
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	5-Square, D-63
Supplier Device Package	D-63
Technology	Standard
Voltage - Peak Reverse (Max) [Max]	800 V

Part	Voltage - Peak Reverse (Max) [Max]	Diode Type	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Package / Case	Mounting Type	Current - Reverse Leakage @ Vr	Current - Average Rectified (Io)
Vishay General Semiconductor - Diodes Division VS-36MT80	800 V	Three Phase	Standard	-55 °C	150 °C	D-63	5-Square D-63	QC Terminal	10 µA	35 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bridge Rectifier Three Phase Standard 800 V QC Terminal D-63

Technical documentation and resources