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SCT4045DEHRC11 - TO-247N

SCT4045DEHRC11

Active
Rohm Semiconductor

750V, 34A, 3-PIN THD, TRENCH-STRUCTURE, SILICON-CARBIDE (SIC) MOSFET FOR AUTOMOTIVE

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Search across all available documentation for this part.

DocumentsAbout Export Administration Regulations (EAR)Types and Features of Transistors+43
SCT4045DEHRC11 - TO-247N

SCT4045DEHRC11

Active
Rohm Semiconductor

750V, 34A, 3-PIN THD, TRENCH-STRUCTURE, SILICON-CARBIDE (SIC) MOSFET FOR AUTOMOTIVE

Deep-Dive with AI

DocumentsAbout Export Administration Regulations (EAR)Types and Features of Transistors+43

Technical Specifications

Parameters and characteristics for this part

SpecificationSCT4045DEHRC11
Current - Continuous Drain (Id) @ 25°C34 A
Drain to Source Voltage (Vdss)750 V
Drive Voltage (Max Rds On, Min Rds On)18 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs63 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds1460 pF
Mounting TypeThrough Hole
Operating Temperature175 °C
Package / CaseTO-247-3
Power Dissipation (Max) [Max]115 W
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs [Max]59 mOhm
Supplier Device PackageTO-247N
Vgs (Max) [Max]21 V
Vgs (Max) [Min]-4 V
Vgs(th) (Max) @ Id4.8 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 5.98
10$ 4.08
450$ 3.69
NewarkEach 1$ 8.79
10$ 7.09
25$ 6.71
50$ 6.41
100$ 6.15
250$ 5.84
900$ 5.74

Description

General part information

SCT4045DEHR Series

AEC-Q101 qualified automotive grade product. SCT4045DEHR is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.Advantages of ROHM's 4th Generation SiC MOSFETThis series has about 40% reduction in on-resistance and about 50% reduction in switching loss compared to conventional products. The 15V gate-source voltage makes application design easier.

Documents

Technical documentation and resources

About Export Administration Regulations (EAR)

Export Information

Types and Features of Transistors

Application Note

Method for Calculating Junction Temperature from Transient Thermal Resistance Data

Thermal Design

Generation Mechanism of Voltage Surge on Commutation Side (Basic)

Technical Article

Package Dimensions

Package Information

Impedance Characteristics of Bypass Capacitor

Schematic Design & Verification

Anti-Whisker formation

Package Information

What Is Thermal Design

Thermal Design

How to Use PLECS Models

Technical Article

Gate-Source Voltage Surge Suppression Methods

Schematic Design & Verification

Two-Resistor Model for Thermal Simulation

Thermal Design

How to Use LTspice® Models: Tips for Improving Convergence

Schematic Design & Verification

Thermal Characterization Guidelines for ROHM's 4th Generation SiC MOSFETs

Thermal Design

Basics and Design Guidelines for Gate Drive Circuits

Schematic Design & Verification

Measurement Method and Usage of Thermal Resistance RthJC

Thermal Design

New SPICE Models with Improved Simulation Speed for Power Semiconductors Are Released!

White Paper

4 Steps for Successful Thermal Designing of Power Devices

White Paper

Simulation Verification to Identify Oscillation between Parallel Dies during Design Phase of Power Modules

Technical Article

Cutting-Edge Web Simulation Tool "ROHM Solution Simulator" Capable of Complete Circuit Verification of Power Devices and Driver ICs

White Paper

4<sup>th</sup> Gen SiC MOSFETs Discrete Package: Characteristics and Precautions for Circuit Design Application Note

Schematic Design & Verification

How to measure the oscillation occurs between parallel-connected devices

Technical Article

Overview of ROHM's Simulation Models(for ICs and Discrete Semiconductors)

Technical Article

Best practices for the connection of Driver Source/Emitter terminals in discrete devices

Schematic Design & Verification

Thermal Resistance Measurement Method for SiC MOSFET

Thermal Design

Example of Heat Dissipation Design for TO Packages: Effect of Heat Dissipation Materials

Thermal Design

Judgment Criteria of Thermal Evaluation

Thermal Design

SiC MOSFET Layout Design Considerations

Technical Article

Snubber circuit design methods for SiC MOSFET

Schematic Design & Verification

Taping Information

Package Information

Calculating Power Loss from Measured Waveforms

Schematic Design & Verification

Precautions during gate-source voltage measurement for SiC MOSFET

Schematic Design & Verification

The Problem with Traditional Vaccine Storage Freezers and How ROHM Cutting-edge Power Solutions Can Take them to the Next Level

White Paper

Method for Monitoring Switching Waveform

Schematic Design & Verification

Explanation for Marking - TO-247N SiC_Marking-e.pdf

Package Information

Precautions for Thermal Resistance of Insulation Sheet

Thermal Design

PCB Layout Thermal Design Guide

Thermal Design

How to Use the Thermal Resistance and Thermal Characteristics Parameters

Thermal Design

Notes for Temperature Measurement Using Thermocouples

Thermal Design

5kW High-Efficiency Fan-less Inverter

Schematic Design & Verification

Compliance of the ELV directive

Environmental Data

θ<sub>JA</sub> and Ψ<sub>JT</sub>

Thermal Design

About Flammability of Materials

Environmental Data

Power Eco Family: Overview of ROHM's Power Semiconductor Lineup

White Paper

Solving the challenges of driving SiC MOSFETs with new packaging developments

White Paper

Importance of Probe Calibration When Measuring Power: Deskew

Schematic Design & Verification