GE2X10MPS06D

Obsolete

GeneSiC Semiconductor

DIODE SCHOTTKY 650V 42A 3-PIN(3+TAB) TO-247

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Obsolete

GeneSiC Semiconductor

DIODE SCHOTTKY 650V 42A 3-PIN(3+TAB) TO-247

Technical Specifications

Parameters and characteristics for this part

Specification	GE2X10MPS06D

Current - Average Rectified (Io) (per Diode)	23 A
Diode Configuration	1 Pair Common Cathode
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	TO-247-3
Speed	No Recovery Time
Supplier Device Package	TO-247-3
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	650 V

Part	Mounting Type	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Average Rectified (Io) (per Diode)	Package / Case	Technology	Speed	Supplier Device Package	Diode Configuration	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]
GeneSiC Semiconductor GE2X10MPS06D	Through Hole	650 V	23 A	TO-247-3	SiC (Silicon Carbide) Schottky	No Recovery Time	TO-247-3	1 Pair Common Cathode	175 ░C	-55 C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode Array 1 Pair Common Cathode 650 V 23A (DC) Through Hole TO-247-3

Technical documentation and resources

No documents available