SGS10N60RUFTU

Obsolete

ON Semiconductor

IGBT 600V 16A 55W TO220F

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Obsolete

ON Semiconductor

IGBT 600V 16A 55W TO220F

Technical Specifications

Parameters and characteristics for this part

Specification	SGS10N60RUFTU

Current - Collector (Ic) (Max) [Max]	16 A
Current - Collector Pulsed (Icm)	30 A
Gate Charge	30 nC
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack
Power - Max [Max]	55 W
Supplier Device Package	TO-220F-3
Switching Energy	215 µJ, 141 µJ
Td (on/off) @ 25°C	15 ns, 36 ns
Test Condition	20 Ohm, 10 A, 300 V, 15 V
Vce(on) (Max) @ Vge, Ic	2.8 V
Voltage - Collector Emitter Breakdown (Max) [Max]	600 V

Part	Mounting Type	Test Condition	Operating Temperature [Min]	Operating Temperature [Max]	Switching Energy	Current - Collector Pulsed (Icm)	Td (on/off) @ 25°C	Vce(on) (Max) @ Vge, Ic	Power - Max [Max]	Package / Case	Current - Collector (Ic) (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Gate Charge	Supplier Device Package
ON Semiconductor SGS10N60RUFTU	Through Hole	10 A 15 V 20 Ohm 300 V	-55 °C	150 °C	141 µJ 215 µJ	30 A	15 ns 36 ns	2.8 V	55 W	TO-220-3 Full Pack	16 A	600 V	30 nC	TO-220F-3

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

IGBT 600 V 16 A 55 W Through Hole TO-220F-3

Technical documentation and resources