ZXTN2007ZTA

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Diodes Inc

POWER BIPOLAR TRANSISTOR, 6A I(C), 30V V(BR)CEO, 1-ELEMENT, NPN, SILICON, PLASTIC/EPOXY, 3 PIN, SOT-89, 3 PIN

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Active

Diodes Inc

POWER BIPOLAR TRANSISTOR, 6A I(C), 30V V(BR)CEO, 1-ELEMENT, NPN, SILICON, PLASTIC/EPOXY, 3 PIN, SOT-89, 3 PIN

Technical Specifications

Parameters and characteristics for this part

Specification	ZXTN2007ZTA

Current - Collector Cutoff (Max) [Max]	50 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	100
Frequency - Transition	140 MHz
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-243AA
Power - Max [Max]	2.1 W
Supplier Device Package	SOT-89-3
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	190 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	30 V

NPN, 30V, 7A, SOT223

Part	Vce Saturation (Max) @ Ib, Ic	Frequency - Transition	Transistor Type	Package / Case	Mounting Type	Current - Collector Cutoff (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Power - Max [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector (Ic) (Max) [Max]
Diodes Inc ZXTN2007ZTA	190 mV	140 MHz	NPN	TO-243AA	Surface Mount	50 nA	-55 °C	150 °C	SOT-89-3	100	2.1 W	30 V
Diodes Inc ZXTN2007GTA	220 mV	140 MHz	NPN	TO-261-4 TO-261AA	Surface Mount	50 nA	-55 °C	150 °C	SOT-223-3	100	3 W	30 V	7 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

NPN, 30V, 7A, SOT223

Technical documentation and resources