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71V016SA10YG8 - 71V016 - Block Diagram

71V016SA10YG8

Obsolete
Renesas Electronics Corporation

3.3V 64K X 16 BIT ASYNCHRONOUS STATIC RAM

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71V016SA10YG8 - 71V016 - Block Diagram

71V016SA10YG8

Obsolete
Renesas Electronics Corporation

3.3V 64K X 16 BIT ASYNCHRONOUS STATIC RAM

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

Specification71V016SA10YG8
Access Time10 ns
Memory FormatSRAM
Memory InterfaceParallel
Memory Organization [custom]64 K
Memory Organization [custom]16 bits
Memory Size1 Mbit
Memory TypeVolatile
Mounting TypeSurface Mount
Operating Temperature [Max]70 °C
Operating Temperature [Min]0 °C
Package / Case10.16 mm
Package / Case44-BSOJ
Package / Case10.16 mm
TechnologySRAM - Asynchronous
Voltage - Supply [Max]3.6 V
Voltage - Supply [Min]3.15 V
Write Cycle Time - Word, Page10 ns

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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Description

General part information

71V016 Series

The 71V016 3.3V CMOS SRAM is organized as 64K x 16. All bidirectional inputs and outputs of the 71V016 are LVTTL-compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation.

Documents

Technical documentation and resources