74HC03D

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Toshiba Semiconductor and Storage

IC GATE NAND 4CH 2-INP 14SOIC

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Toshiba Semiconductor and Storage

IC GATE NAND 4CH 2-INP 14SOIC

Technical Specifications

Parameters and characteristics for this part

Specification	74HC03D

Current - Output High, Low	-
Current - Output High, Low	5.2 mA
Current - Quiescent (Max) [Max]	1 çA
Features	Open Drain
Input Logic Level - High [Max]	4.2 V
Input Logic Level - High [Min]	1.5 V
Input Logic Level - Low [Max]	1.8 V
Input Logic Level - Low [Min]	0.5 V
Logic Type	NAND Gate
Max Propagation Delay @ V, Max CL	13 ns
Mounting Type	Surface Mount
Number of Circuits	4
Number of Inputs	2
Operating Temperature [Max]	125 °C
Operating Temperature [Min]	-40 °C
Package / Case	14-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Voltage - Supply [Max]	6 V
Voltage - Supply [Min]	2 V

Part	Number of Circuits	Number of Inputs	Current - Output High, Low	Current - Output High, Low	Logic Type	Voltage - Supply [Min]	Voltage - Supply [Max]	Input Logic Level - Low [Max]	Input Logic Level - Low [Min]	Max Propagation Delay @ V, Max CL	Operating Temperature [Max]	Operating Temperature [Min]	Mounting Type	Features	Input Logic Level - High [Min]	Input Logic Level - High [Max]	Package / Case [x]	Package / Case [y]	Package / Case	Current - Quiescent (Max) [Max]
Toshiba Semiconductor and Storage 74HC03D	4	2	-	5.2 mA	NAND Gate	2 V	6 V	1.8 V	0.5 V	13 ns	125 °C	-40 °C	Surface Mount	Open Drain	1.5 V	4.2 V	0.154 in	3.9 mm	14-SOIC	1 çA

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General part information

NAND Gate IC 4 Channel Open Drain 14-SOIC

Technical documentation and resources