XP231P02013R-G

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Torex Semiconductor Ltd

MOSFET P-CH 30V 200MA SOT323-3

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Torex Semiconductor Ltd

MOSFET P-CH 30V 200MA SOT323-3

Technical Specifications

Parameters and characteristics for this part

Specification	XP231P02013R-G

Current - Continuous Drain (Id) @ 25°C	200 mA
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 2.5 V
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	34 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SC-70, SOT-323
Power Dissipation (Max) [Max]	350 mW
Rds On (Max) @ Id, Vgs [Max]	5 Ohm
Supplier Device Package	SOT-323-3A
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	1.2 V

Part	Vgs(th) (Max) @ Id	Operating Temperature	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Technology	Package / Case	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	FET Type	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Rds On (Max) @ Id, Vgs [Max]	Power Dissipation (Max) [Max]
Torex Semiconductor Ltd XP231N0201TR-G	1.8 V	150 °C	0.18 nC	Surface Mount	30 V	5 Ohm	MOSFET (Metal Oxide)	SC-59 SOT-23-3 TO-236-3	SOT-23 (TO-236)	2.5 V 4.5 V	400 mW	N-Channel	200 mA	6.5 pF	20 V
Torex Semiconductor Ltd XP231P02013R-G	1.2 V	150 °C		Surface Mount	30 V		MOSFET (Metal Oxide)	SC-70 SOT-323	SOT-323-3A	2.5 V 4.5 V		P-Channel	200 mA	34 pF	8 V	5 Ohm	350 mW

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General part information

P-Channel 30 V 200mA (Tc) 350mW (Ta) Surface Mount SOT-323-3A

Technical documentation and resources