
UCC27222PWPG4
UnknownDRIVER 4A 2-OUT HIGH SIDE/LOW SIDE HALF BRDG INV/NON-INV 14-PIN HTSSOP EP TUBE
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UCC27222PWPG4
UnknownDRIVER 4A 2-OUT HIGH SIDE/LOW SIDE HALF BRDG INV/NON-INV 14-PIN HTSSOP EP TUBE
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Technical Specifications
Parameters and characteristics for this part
| Specification | UCC27222PWPG4 |
|---|---|
| Channel Type | Synchronous |
| Current - Peak Output (Source, Sink) [custom] | 4 A |
| Current - Peak Output (Source, Sink) [custom] | 4 A |
| Driven Configuration | Half-Bridge |
| Gate Type | MOSFET (N-Channel), N-Channel MOSFET |
| Input Type | Non-Inverting |
| Logic Voltage - VIL, VIH | 0.7 V, 2.6 V |
| Mounting Type | Surface Mount |
| Number of Drivers | 2 |
| Operating Temperature [Max] | 115 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 14-PowerTSSOP |
| Package / Case [x] | 0.173 in |
| Package / Case [y] | 4.4 mm |
| Rise / Fall Time (Typ) [custom] | 17 ns |
| Rise / Fall Time (Typ) [custom] | 17 ns |
| Supplier Device Package | 14-HTSSOP |
| Voltage - Supply [Max] | 20 V |
| Voltage - Supply [Min] | 3.7 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
UCC27222 Series
The UCC27221 and UCC27222 are high-speed synchronous buck drivers for today’s high-efficiency, lower-output voltage designs. Using Predictive Gate Drive™ (PGD) control technology, these drivers reduce diode conduction and reverse recovery losses in the synchronous rectifier MOSFET(s). The UCC27221 has an inverted PWM input while the UCC27222 has a non-inverting PWM input.
Predictive Gate Drive™ technology uses control loops which are stabilized internally and are therefore transparent to the user. These loops use no external components, so no additional design is needed to take advantage of the higher efficiency of these drivers.
This closed loop feedback system detects body-diode conduction, and adjusts deadtime delays to minimize the conduction time interval. This virtually eliminates body-diode conduction while adjusting for temperature, load- dependent delays, and for different MOSFETs. Precise gate timing at the nanosecond level reduces the reverse recovery time of the synchronous rectifier MOSFET body-diode, reducing reverse recovery losses seen in the main (high-side) MOSFET. The lower junction temperature in the low-side MOSFET increases product reliability. Since the power dissipation is minimized, a higher switching frequency can also be used, allowing for smaller component sizes.
Documents
Technical documentation and resources