2N6338G

Obsolete

ON Semiconductor

25 A, 100 V NPN BIPOLAR POWER TRANSISTOR

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Obsolete

ON Semiconductor

25 A, 100 V NPN BIPOLAR POWER TRANSISTOR

Technical Specifications

Parameters and characteristics for this part

Specification	2N6338G

Current - Collector (Ic) (Max) [Max]	25 A
Current - Collector Cutoff (Max) [Max]	50 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	30
Frequency - Transition	40 MHz
Mounting Type	Through Hole
Package / Case	TO-3, TO-204AA
Power - Max [Max]	200 W
Supplier Device Package	TO-204
Supplier Device Package	TO-3
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	1.8 V
Voltage - Collector Emitter Breakdown (Max) [Max]	100 V

Part	Mounting Type	Current - Collector (Ic) (Max) [Max]	Current - Collector Cutoff (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Voltage - Collector Emitter Breakdown (Max) [Max]	Package / Case	Supplier Device Package	Supplier Device Package	Vce Saturation (Max) @ Ib, Ic	Power - Max [Max]	Frequency - Transition	Transistor Type
ON Semiconductor 2N6338	Through Hole	25 A	50 µA	30	100 V	TO-204AA TO-3	TO-204	TO-3	1.8 V	200 W	40 MHz	NPN
ON Semiconductor 2N6338G	Through Hole	25 A	50 µA	30	100 V	TO-204AA TO-3	TO-204	TO-3	1.8 V	200 W	40 MHz	NPN

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

The 25 A, 100 V NPN Bipolar Power Transistor is designed for use in industrial-military power amplifier and switching circuit applications.