1HN04CH-TL-W

Obsolete

ON Semiconductor

MOSFET N-CH 100V 270MA 3CPH

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Obsolete

ON Semiconductor

MOSFET N-CH 100V 270MA 3CPH

Technical Specifications

Parameters and characteristics for this part

Specification	1HN04CH-TL-W

Current - Continuous Drain (Id) @ 25°C	270 mA
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	4 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	0.9 nC
Input Capacitance (Ciss) (Max) @ Vds	15 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Rds On (Max) @ Id, Vgs	8 Ohm
Supplier Device Package	3-CPH
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.6 V

Part	Technology	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	FET Type	Mounting Type	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Operating Temperature	Vgs (Max)
ON Semiconductor 1HN04CH-TL-W	MOSFET (Metal Oxide)	4 V	10 V	N-Channel	Surface Mount	8 Ohm	100 V	15 pF	270 mA	2.6 V	SC-59 SOT-23-3 TO-236-3	0.9 nC	3-CPH	150 °C	20 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 100 V 270mA (Ta) Surface Mount 3-CPH

Technical documentation and resources

No documents available