SGP13N60UFDTU

Obsolete

ON Semiconductor

IGBT 600V 13A 60W TO220

Search across all available documentation for this part.

Obsolete

ON Semiconductor

IGBT 600V 13A 60W TO220

Technical Specifications

Parameters and characteristics for this part

Specification	SGP13N60UFDTU

Current - Collector Pulsed (Icm)	52 A
Gate Charge	25 nC
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power - Max [Max]	60 W
Reverse Recovery Time (trr)	55 ns
Supplier Device Package	TO-220-3
Switching Energy	95 µJ, 85 µJ
Td (on/off) @ 25°C	70 ns, 20 ns
Test Condition	6.5 A, 50 Ohm, 15 V, 300 V
Vce(on) (Max) @ Vge, Ic	2.6 V
Voltage - Collector Emitter Breakdown (Max) [Max]	600 V

Part	Td (on/off) @ 25°C	Vce(on) (Max) @ Vge, Ic	Operating Temperature [Min]	Operating Temperature [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Mounting Type	Test Condition	Gate Charge	Power - Max [Max]	Supplier Device Package	Switching Energy	Reverse Recovery Time (trr)	Current - Collector Pulsed (Icm)	Package / Case
ON Semiconductor SGP13N60UFDTU	20 ns 70 ns	2.6 V	-55 °C	150 °C	600 V	Through Hole	6.5 A 15 V 50 Ohm 300 V	25 nC	60 W	TO-220-3	85 µJ 95 µJ	55 ns	52 A	TO-220-3
ON Semiconductor SGP13N60UFDTU	20 ns 70 ns	2.6 V	-55 °C	150 °C	600 V	Through Hole	6.5 A 15 V 50 Ohm 300 V	25 nC	60 W	TO-220-3	85 µJ 95 µJ	55 ns	52 A	TO-220-3

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

IGBT 600 V 13 A 60 W Through Hole TO-220-3

Technical documentation and resources