CR1F-100 BK

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Central Semiconductor Corp

DIODE GEN PURP 1KV 1.5A DO41

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Central Semiconductor Corp

DIODE GEN PURP 1KV 1.5A DO41

Technical Specifications

Parameters and characteristics for this part

Specification	CR1F-100 BK

Current - Average Rectified (Io)	1.5 A
Current - Reverse Leakage @ Vr	5 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-65 C
Package / Case	DO-204AL, DO-41, Axial
Reverse Recovery Time (trr)	500 ns
Speed	200 mA, 500 ns
Supplier Device Package	DO-41
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	1000 V
Voltage - Forward (Vf) (Max) @ If	1.2 V

Part	Reverse Recovery Time (trr)	Package / Case	Technology	Supplier Device Package	Current - Average Rectified (Io)	Current - Reverse Leakage @ Vr	Mounting Type	Voltage - Forward (Vf) (Max) @ If	Speed	Voltage - DC Reverse (Vr) (Max) [Max]	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]
Central Semiconductor Corp CR1F-100 BK	500 ns	Axial DO-204AL DO-41	Standard	DO-41	1.5 A	5 µA	Through Hole	1.2 V	200 mA 500 ns	1000 V	175 ░C	-65 C
Central Semiconductor Corp CR1F-100 TR	500 ns	Axial DO-204AL DO-41	Standard	DO-41	1.5 A	5 µA	Through Hole	1.2 V	200 mA 500 ns	1000 V	175 ░C	-65 C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	12000	$ 0.07

General part information

Diode 1000 V 1.5A Through Hole DO-41

Technical documentation and resources