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W66BP2NQUAFJ

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Winbond Electronics

IC DRAM 2GBIT LVSTL 11 200TFBGA

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W66BP2NQUAFJ

Active
Winbond Electronics

IC DRAM 2GBIT LVSTL 11 200TFBGA

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationW66BP2NQUAFJ
Access Time3.6 ns
Clock Frequency1.6 GHz
Memory FormatDRAM
Memory Organization64M x 32
Memory Size2 Gbit
Memory TypeVolatile
Mounting TypeSurface Mount
Operating Temperature [Max]105 °C
Operating Temperature [Min]-40 °C
Package / Case200-TFBGA
Supplier Device Package200-TFBGA
Supplier Device Package [x]10
Supplier Device Package [y]14.5
TechnologySDRAM - Mobile LPDDR4
Voltage - Supply [Max]1.95 V, 1.17 V
Voltage - Supply [Min]1.06 V, 1.7 V
Write Cycle Time - Word, Page18 ns

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTray 144$ 4.41

Description

General part information

W66BP2 Series

SDRAM - Mobile LPDDR4 Memory IC 2Gbit LVSTL_11 1.6 GHz 3.6 ns 200-TFBGA (10x14.5)

Documents

Technical documentation and resources

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