ZXTN5551FLTA

Diodes Inc

SMALL SIGNAL BIPOLAR TRANSISTOR, 0.6A I(C), 160V V(BR)CEO, 1-ELEMENT, NPN, SILICON, SOT-23, 3 PIN

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Diodes Inc

SMALL SIGNAL BIPOLAR TRANSISTOR, 0.6A I(C), 160V V(BR)CEO, 1-ELEMENT, NPN, SILICON, SOT-23, 3 PIN

Technical Specifications

Parameters and characteristics for this part

Specification	ZXTN5551FLTA

Current - Collector (Ic) (Max) [Max]	600 mA
Current - Collector Cutoff (Max) [Max]	50 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	80
Frequency - Transition	130 MHz
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power - Max [Max]	330 mW
Supplier Device Package	SOT-23-3
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	200 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	160 V

NRND = Not Recommended for New Design

Part	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector (Ic) (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector Cutoff (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Package / Case	Transistor Type	Power - Max [Max]	Supplier Device Package	Frequency - Transition
Diodes Inc ZXTN5551FLTA	160 V	600 mA	-55 °C	150 °C	Surface Mount	80	50 nA	200 mV	SC-59 SOT-23-3 TO-236-3	NPN	330 mW	SOT-23-3	130 MHz
Diodes Inc ZXTN5551GTA	160 V	600 mA	-55 °C	150 °C	Surface Mount	80	50 nA	200 mV	TO-261-4 TO-261AA	NPN	2 W	SOT-223-3	130 MHz

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General part information

NRND = Not Recommended for New Design

Technical documentation and resources