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SCT2160KEGC11 - TO-247N

SCT2160KEGC11

Active
Rohm Semiconductor

POWER FIELD-EFFECT TRANSISTOR, 22A I(D), 1200V, 0.208OHM, 1-ELEMENT, N-CHANNEL, SILICON CARBIDE, METAL-OXIDE SEMICONDUCTOR FET, TO-247, TO-247N, 3 PIN

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DocumentsWhat Is Thermal DesignReliability Test Result+45
SCT2160KEGC11 - TO-247N

SCT2160KEGC11

Active
Rohm Semiconductor

POWER FIELD-EFFECT TRANSISTOR, 22A I(D), 1200V, 0.208OHM, 1-ELEMENT, N-CHANNEL, SILICON CARBIDE, METAL-OXIDE SEMICONDUCTOR FET, TO-247, TO-247N, 3 PIN

Deep-Dive with AI

DocumentsWhat Is Thermal DesignReliability Test Result+45

Technical Specifications

Parameters and characteristics for this part

SpecificationSCT2160KEGC11
Current - Continuous Drain (Id) @ 25°C22 A
Drain to Source Voltage (Vdss)1200 V
Drive Voltage (Max Rds On, Min Rds On)18 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs62 nC
Input Capacitance (Ciss) (Max) @ Vds1200 pF
Mounting TypeThrough Hole
Operating Temperature175 °C
Package / CaseTO-247-3
Power Dissipation (Max) [Max]165 W
Rds On (Max) @ Id, Vgs208 mOhm
Supplier Device PackageTO-247N
Vgs (Max) [Max]22 V
Vgs (Max) [Min]-6 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 14.50
10$ 11.65
NewarkEach 1$ 16.38
10$ 15.32
25$ 14.88
50$ 13.44
100$ 12.65
250$ 11.12
900$ 10.76

Description

General part information

SCT2160KEHR Series

This is SiC (Silicon Carbide) planar MOSFET. This product have high voltage resistance, low ON resistance, and fast switching speed features. AEC-Q101 qualified automotive grade product.

Documents

Technical documentation and resources

What Is Thermal Design

Thermal Design

Reliability Test Result

Manufacturing Data

How to Create Symbols for PSpice Models

Models

About Export Administration Regulations (EAR)

Export Information

Power Eco Family: Overview of ROHM's Power Semiconductor Lineup

White Paper

Gate-Source Voltage Surge Suppression Methods

Schematic Design & Verification

How to Use PLECS Models

Technical Article

Simulation Verification to Identify Oscillation between Parallel Dies during Design Phase of Power Modules

Technical Article

Notes for Temperature Measurement Using Thermocouples

Thermal Design

Precautions during gate-source voltage measurement for SiC MOSFET

Schematic Design & Verification

Types and Features of Transistors

Application Note

Importance of Probe Calibration When Measuring Power: Deskew

Schematic Design & Verification

Generation Mechanism of Voltage Surge on Commutation Side (Basic)

Technical Article

Cutting-Edge Web Simulation Tool "ROHM Solution Simulator" Capable of Complete Circuit Verification of Power Devices and Driver ICs

White Paper

Constitution Materials List

Environmental Data

Solving the challenges of driving SiC MOSFETs with new packaging developments

White Paper

PCB Layout Thermal Design Guide

Thermal Design

Overview of ROHM's Simulation Models(for ICs and Discrete Semiconductors)

Technical Article

Thermal Resistance Measurement Method for SiC MOSFET

Thermal Design

Method for Calculating Junction Temperature from Transient Thermal Resistance Data

Thermal Design

How to Use LTspice® Models: Tips for Improving Convergence

Schematic Design & Verification

4 Steps for Successful Thermal Designing of Power Devices

White Paper

Basics and Design Guidelines for Gate Drive Circuits

Schematic Design & Verification

How to Use the Thermal Resistance and Thermal Characteristics Parameters

Thermal Design

Judgment Criteria of Thermal Evaluation

Thermal Design

Impedance Characteristics of Bypass Capacitor

Schematic Design & Verification

Method for Monitoring Switching Waveform

Schematic Design & Verification

Two-Resistor Model for Thermal Simulation

Thermal Design

5kW High-Efficiency Fan-less Inverter

Schematic Design & Verification

The Problem with Traditional Vaccine Storage Freezers and How ROHM Cutting-edge Power Solutions Can Take them to the Next Level

White Paper

SCT2160KE Data Sheet

Data Sheet

Calculating Power Loss from Measured Waveforms

Schematic Design & Verification

Measurement Method and Usage of Thermal Resistance RthJC

Thermal Design

Snubber circuit design methods for SiC MOSFET

Schematic Design & Verification

About Flammability of Materials

Environmental Data

Best practices for the connection of Driver Source/Emitter terminals in discrete devices

Schematic Design & Verification

Example of Heat Dissipation Design for TO Packages: Effect of Heat Dissipation Materials

Thermal Design

Precautions for Thermal Resistance of Insulation Sheet

Thermal Design

Anti-Whisker formation

Package Information

Compliance of the ELV directive

Environmental Data

SiC MOSFET Layout Design Considerations

Technical Article

θ<sub>JA</sub> and Ψ<sub>JT</sub>

Thermal Design

Explanation for Marking - TO-247N SiC_Marking-e.pdf

Package Information

Package Dimensions

Package Information

Taping Information

Package Information

How to measure the oscillation occurs between parallel-connected devices

Technical Article

Technical Data Sheet EN

Datasheet