CP608-TIP32C-CT

Obsolete

Central Semiconductor Corp

TRANSISTOR

Search across all available documentation for this part.

Obsolete

Central Semiconductor Corp

TRANSISTOR

Technical Specifications

Parameters and characteristics for this part

Specification	CP608-TIP32C-CT

Current - Collector (Ic) (Max) [Max]	3 A
Current - Collector Cutoff (Max) [Max]	300 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	25 hFE
Frequency - Transition	3 MHz
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-65 °C
Package / Case	Die
Power - Max [Max]	2 W
Supplier Device Package	Die
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	1.2 V
Voltage - Collector Emitter Breakdown (Max) [Max]	100 V

Part	Current - Collector Cutoff (Max) [Max]	Current - Collector (Ic) (Max) [Max]	Mounting Type	Operating Temperature [Max]	Operating Temperature [Min]	Voltage - Collector Emitter Breakdown (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Frequency - Transition	Supplier Device Package	Package / Case	Power - Max [Max]	Transistor Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]
Central Semiconductor Corp CP608-TIP32C-CT	300 µA	3 A	Surface Mount	150 °C	-65 °C	100 V	1.2 V	3 MHz	Die	Die	2 W	PNP	25 hFE

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Bipolar (BJT) Transistor PNP 100 V 3 A 3MHz 2 W Surface Mount Die

Technical documentation and resources

No documents available