MBR3540R

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GeneSiC Semiconductor

40V 35A 680MV@35A DO-4 SCHOTTKY DIODES ROHS

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GeneSiC Semiconductor

40V 35A 680MV@35A DO-4 SCHOTTKY DIODES ROHS

Technical Specifications

Parameters and characteristics for this part

Specification	MBR3540R

Current - Average Rectified (Io)	35 A
Current - Reverse Leakage @ Vr	1.5 mA
Mounting Type	Chassis, Stud Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	Stud, DO-203AA, DO-4
Speed	200 mA, 500 ns
Supplier Device Package	DO-4
Technology	Schottky, Reverse Polarity
Voltage - DC Reverse (Vr) (Max) [Max]	40 V
Voltage - Forward (Vf) (Max) @ If	680 mV

Part	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Voltage - DC Reverse (Vr) (Max) [Max]	Supplier Device Package	Speed	Current - Average Rectified (Io)	Mounting Type	Current - Reverse Leakage @ Vr	Package / Case	Technology	Voltage - Forward (Vf) (Max) @ If
GeneSiC Semiconductor MBR3540R	150 °C	-55 °C	40 V	DO-4	200 mA 500 ns	35 A	Chassis Stud Mount	1.5 mA	DO-203AA DO-4 Stud	Reverse Polarity Schottky	680 mV

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General part information

Diode 40 V 35A Chassis, Stud Mount DO-4

Technical documentation and resources