1N5417TR
ActiveVishay General Semiconductor - Diodes Division
DIODE AVALANCHE 200V 3A SOD64
Deep-Dive with AI
Search across all available documentation for this part.
DocumentsDatasheet
1N5417TR
ActiveVishay General Semiconductor - Diodes Division
DIODE AVALANCHE 200V 3A SOD64
Deep-Dive with AI
DocumentsDatasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | 1N5417TR |
|---|---|
| Current - Average Rectified (Io) | 3 A |
| Current - Reverse Leakage @ Vr | 1 µA |
| Mounting Type | Through Hole |
| Operating Temperature - Junction [Max] | 175 ░C |
| Operating Temperature - Junction [Min] | -55 C |
| Package / Case | SOD-64, Axial |
| Speed | 200 mA, 500 ns |
| Supplier Device Package | SOD-64 |
| Technology | Avalanche |
| Voltage - DC Reverse (Vr) (Max) [Max] | 200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 1.00 | |
| 10 | $ 0.82 | |||
| 100 | $ 0.64 | |||
| 500 | $ 0.54 | |||
| 1000 | $ 0.44 | |||
| Tape & Reel (TR) | 2500 | $ 0.38 | ||
Description
General part information
1N5417 Series
Diode 200 V 3A Through Hole SOD-64
Documents
Technical documentation and resources