TPCA8109(TE12L1,V

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Toshiba Semiconductor and Storage

MOSFET P-CH 30V 24A 8SOP

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Toshiba Semiconductor and Storage

MOSFET P-CH 30V 24A 8SOP

Technical Specifications

Parameters and characteristics for this part

Specification	TPCA8109(TE12L1,V

Current - Continuous Drain (Id) @ 25°C	24 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	56 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	2400 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	8-PowerVDFN
Power Dissipation (Max)	30 W, 1.6 W
Rds On (Max) @ Id, Vgs	9 mOhm
Supplier Device Package	8-SOP Advance (5x5)
Technology	MOSFET (Metal Oxide)
Vgs (Max) [Max]	20 V
Vgs (Max) [Min]	-25 V
Vgs(th) (Max) @ Id	2 V

Part	Package / Case	Input Capacitance (Ciss) (Max) @ Vds [Max]	Mounting Type	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Supplier Device Package	Operating Temperature	Gate Charge (Qg) (Max) @ Vgs	Technology	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Vgs (Max) [Max]	Vgs (Max) [Min]	FET Type
Toshiba Semiconductor and Storage TPCA8109(TE12L1,V	8-PowerVDFN	2400 pF	Surface Mount	2 V	4.5 V 10 V	24 A	1.6 W 30 W	8-SOP Advance (5x5)	150 °C	56 nC	MOSFET (Metal Oxide)	30 V	9 mOhm	20 V	-25 V	P-Channel

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

P-Channel 30 V 24A (Ta) 1.6W (Ta), 30W (Tc) Surface Mount 8-SOP Advance (5x5)

Technical documentation and resources

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