2N3810

Obsolete

Central Semiconductor Corp

TRANS 2PNP 50MA 60V TO78-6

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Obsolete

Central Semiconductor Corp

TRANS 2PNP 50MA 60V TO78-6

Technical Specifications

Parameters and characteristics for this part

Specification	2N3810

Current - Collector (Ic) (Max) [Max]	50 mA
Current - Collector Cutoff (Max) [Max]	0.01 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	150
Frequency - Transition	100 MHz
Mounting Type	Through Hole
Package / Case	TO-78-6 Metal Can
Power - Max [Max]	600 mW
Supplier Device Package	TO-78-6
Transistor Type	2 PNP (Dual)
Vce Saturation (Max) @ Ib, Ic	250 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	60 V

Part	Supplier Device Package	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Power - Max [Max]	Package / Case	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector (Ic) (Max) [Max]	Frequency - Transition	Transistor Type	Mounting Type
Central Semiconductor Corp 2N3810	TO-78-6	250 mV	0.01 µA	60 V	600 mW	TO-78-6 Metal Can	150	50 mA	100 MHz	2 PNP (Dual)	Through Hole
Central Semiconductor Corp 2N3807	TO-78-6			60 V	600 mW	TO-78-6 Metal Can	300	50 mA	100 MHz	2 PNP (Dual)	Through Hole

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bipolar (BJT) Transistor Array 2 PNP (Dual) 60V 50mA 100MHz 600mW Through Hole TO-78-6

Technical documentation and resources