1N5826

Active

GeneSiC Semiconductor

DIODE SCHOTTKY 20V 15A DO5

Search across all available documentation for this part.

Active

GeneSiC Semiconductor

DIODE SCHOTTKY 20V 15A DO5

Technical Specifications

Parameters and characteristics for this part

Specification	1N5826

Current - Average Rectified (Io)	15 A
Current - Reverse Leakage @ Vr	10 mA
Mounting Type	Chassis, Stud Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-65 C
Package / Case	DO-203AB, DO-5, Stud
Speed	200 mA, 500 ns
Supplier Device Package	DO-5
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	20 V
Voltage - Forward (Vf) (Max) @ If	440 mV

Part	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Voltage - Forward (Vf) (Max) @ If	Technology	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Average Rectified (Io)	Current - Reverse Leakage @ Vr	Supplier Device Package	Mounting Type	Package / Case	Speed
GeneSiC Semiconductor 1N5826	150 °C	-65 C	440 mV	Schottky	20 V	15 A	10 mA	DO-5	Chassis Stud Mount	DO-203AB DO-5 Stud	200 mA 500 ns

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 20 V 15A Chassis, Stud Mount DO-5

Technical documentation and resources