XP261N70023R-G

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Torex Semiconductor Ltd

MOSFET N-CH 60V 150MA SOT323-3

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Torex Semiconductor Ltd

MOSFET N-CH 60V 150MA SOT323-3

Technical Specifications

Parameters and characteristics for this part

Specification	XP261N70023R-G

Current - Continuous Drain (Id) @ 25°C	150 mA
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	0.38 nC
Input Capacitance (Ciss) (Max) @ Vds	18 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SC-70, SOT-323
Power Dissipation (Max) [Max]	350 mW
Rds On (Max) @ Id, Vgs	5 Ohm
Supplier Device Package	SOT-323-3A
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.1 V

Part	Power Dissipation (Max) [Max]	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Drain to Source Voltage (Vdss)	Vgs (Max)	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Operating Temperature	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Technology	Rds On (Max) @ Id, Vgs
Torex Semiconductor Ltd XP261N70023R-G	350 mW	2.1 V	0.38 nC	Surface Mount	60 V	20 V	SC-70 SOT-323	18 pF	150 mA	150 °C	N-Channel	4.5 V 10 V	SOT-323-3A	MOSFET (Metal Oxide)	5 Ohm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 60 V 150mA (Ta) 350mW (Ta) Surface Mount SOT-323-3A

Technical documentation and resources