IXFN30N110P

Obsolete

IXYS

MOSFET N-CH 1100V 25A SOT-227B

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Obsolete

IXYS

MOSFET N-CH 1100V 25A SOT-227B

Technical Specifications

Parameters and characteristics for this part

Specification	IXFN30N110P

Current - Continuous Drain (Id) @ 25°C	25 A
Drain to Source Voltage (Vdss)	1100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	235 nC
Input Capacitance (Ciss) (Max) @ Vds	13600 pF
Mounting Type	Chassis Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-227-4, miniBLOC
Power Dissipation (Max)	695 W
Rds On (Max) @ Id, Vgs	360 mOhm
Supplier Device Package	SOT-227B
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	6.5 V

Part	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Technology	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Power Dissipation (Max)	Package / Case	Rds On (Max) @ Id, Vgs	FET Type
IXYS IXFN30N110P	235 nC	30 V	10 V	MOSFET (Metal Oxide)	Chassis Mount	25 A	6.5 V	1100 V	-55 °C	150 °C	13600 pF	SOT-227B	695 W	SOT-227-4 miniBLOC	360 mOhm	N-Channel

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 1100 V 25A (Tc) 695W (Tc) Chassis Mount SOT-227B

Technical documentation and resources

No documents available