IS61WV51216EDBLL-10TLI

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ISSI, Integrated Silicon Solution Inc

SRAM CHIP ASYNC SINGLE 3V 8M-BIT 512K X 16 10NS 44-PIN TSOP-II

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IS61WV51216EDBLL-10TLI

Active

ISSI, Integrated Silicon Solution Inc

SRAM CHIP ASYNC SINGLE 3V 8M-BIT 512K X 16 10NS 44-PIN TSOP-II

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Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IS61WV51216EDBLL-10TLI

Access Time	10 ns
Memory Format	SRAM
Memory Interface	Parallel
Memory Organization	512 K
Memory Size	1024 KB
Memory Type	Volatile
Mounting Type	Surface Mount
Operating Temperature [Max]	85 °C
Operating Temperature [Min]	-40 °C
Package / Case	10.16 mm
Package / Case	10.16 mm
Package / Case	44-TSOP
Supplier Device Package	44-TSOP II
Technology	SRAM - Asynchronous
Voltage - Supply [Max]	3.6 V
Voltage - Supply [Min]	2.4 V
Write Cycle Time - Word, Page	10 ns

IS61WV51216 Series

Part	Technology	Write Cycle Time - Word, Page	Memory Format	Voltage - Supply [Min]	Voltage - Supply [Max]	Mounting Type	Package / Case	Package / Case	Package / Case	Memory Type	Access Time	Supplier Device Package	Operating Temperature [Max]	Operating Temperature [Min]	Memory Size	Memory Interface	Memory Organization
ISSI, Integrated Silicon Solution Inc IS61WV51216BLL-10TLI	SRAM - Asynchronous	10 ns	SRAM	2.4 V	3.6 V	Surface Mount	10.16 mm	10.16 mm	44-TSOP	Volatile	10 ns	44-TSOP II	85 °C	-40 °C	1024 KB	Parallel	512 K
ISSI, Integrated Silicon Solution Inc IS61WV51216EDALL-20TLI	SRAM - Asynchronous	20 ns	SRAM	1.65 V	2.2 V	Surface Mount	10.16 mm	10.16 mm	44-TSOP	Volatile	20 ns	44-TSOP II	85 °C	-40 °C	1024 KB	Parallel	512 K
ISSI, Integrated Silicon Solution Inc IS61WV51216EEBLL-10BLI-TR	SRAM - Asynchronous	10 ns	SRAM	2.4 V	3.6 V	Surface Mount			48-TFBGA	Volatile	10 ns	48-TFBGA (6x8)	85 °C	-40 °C	1024 KB	Parallel	512 K
ISSI, Integrated Silicon Solution Inc IS61WV51216BLL-10MLI-TR	SRAM - Asynchronous	10 ns	SRAM	2.4 V	3.6 V	Surface Mount			48-TFBGA	Volatile	10 ns	48-miniBGA (9x11)	85 °C	-40 °C	1024 KB	Parallel	512 K
ISSI, Integrated Silicon Solution Inc IS61WV51216EEBLL-10BLI	SRAM - Asynchronous	10 ns	SRAM	2.4 V	3.6 V	Surface Mount			48-TFBGA	Volatile	10 ns	48-TFBGA (6x8)	85 °C	-40 °C	1024 KB	Parallel	512 K
ISSI, Integrated Silicon Solution Inc IS61WV51216EEBLL-10B2LI	SRAM - Asynchronous	10 ns	SRAM	2.4 V	3.6 V	Surface Mount			48-TFBGA	Volatile	10 ns	48-TFBGA (6x8)	85 °C	-40 °C	1024 KB	Parallel	512 K
ISSI, Integrated Silicon Solution Inc IS61WV51216EDBLL-8TLI	SRAM - Asynchronous	8 ns	SRAM	2.4 V	3.6 V	Surface Mount	10.16 mm	10.16 mm	44-TSOP	Volatile	8 ns	44-TSOP II	85 °C	-40 °C	1024 KB	Parallel	512 K
ISSI, Integrated Silicon Solution Inc IS61WV51216EEBLL-10B2LI-TR	SRAM - Asynchronous	10 ns	SRAM	2.4 V	3.6 V	Surface Mount			48-TFBGA	Volatile	10 ns	48-TFBGA (6x8)	85 °C	-40 °C	1024 KB	Parallel	512 K
ISSI, Integrated Silicon Solution Inc IS61WV51216EDBLL-8BLI	SRAM - Asynchronous	8 ns	SRAM	2.4 V	3.6 V	Surface Mount			48-TFBGA	Volatile	8 ns	48-TFBGA (6x8)	85 °C	-40 °C	1024 KB	Parallel	512 K
ISSI, Integrated Silicon Solution Inc IS61WV51216EDBLL-10TLI	SRAM - Asynchronous	10 ns	SRAM	2.4 V	3.6 V	Surface Mount	10.16 mm	10.16 mm	44-TSOP	Volatile	10 ns	44-TSOP II	85 °C	-40 °C	1024 KB	Parallel	512 K

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tray	1	$ 11.82
		10	$ 10.94
		25	$ 10.70
		40	$ 10.64
		135	$ 9.37
		270	$ 8.90
		540	$ 8.81
		945	$ 8.52

Description

General part information

IS61WV51216 Series

High-speed access times: 8, 10, 20 ns

High-performance, low-power CMOS process

Multiple center power and ground pins for greater noise immunity

Documents

Technical documentation and resources

No documents available