BUJ403A,127

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WeEn Semiconductors Co., Ltd

TRANS NPN 550V 6A TO220AB

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WeEn Semiconductors Co., Ltd

TRANS NPN 550V 6A TO220AB

Technical Specifications

Parameters and characteristics for this part

Specification	BUJ403A,127

Current - Collector Cutoff (Max) [Max]	100 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	20
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3
Power - Max [Max]	100 W
Supplier Device Package	TO-220AB
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	1 V
Voltage - Collector Emitter Breakdown (Max)	550 V

Part	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Vce Saturation (Max) @ Ib, Ic	Supplier Device Package	Operating Temperature	Transistor Type	Package / Case	Current - Collector Cutoff (Max) [Max]	Mounting Type	Power - Max [Max]	Voltage - Collector Emitter Breakdown (Max)
WeEn Semiconductors Co., Ltd BUJ403A,127	20	1 V	TO-220AB	150 °C	NPN	TO-220-3	100 µA	Through Hole	100 W	550 V
WeEn Semiconductors Co., Ltd BUJ403A/DG,127	20	1 V	TO-220AB	150 °C	NPN	TO-220-3	100 µA	Through Hole	100 W	550 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bipolar (BJT) Transistor NPN 550 V 6 A 100 W Through Hole TO-220AB

Technical documentation and resources

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