71V67602S150BGG8

Obsolete

Renesas Electronics Corporation

3.3V 256K X 36 SYNCHRONOUS 2.5V I/O PIPELINED SRAM

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71V67602S150BGG8

Obsolete

Renesas Electronics Corporation

3.3V 256K X 36 SYNCHRONOUS 2.5V I/O PIPELINED SRAM

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Technical Specifications

Parameters and characteristics for this part

Specification	71V67602S150BGG8

Access Time	3.8 ns
Clock Frequency	150 MHz
Memory Format	SRAM
Memory Interface	Parallel
Memory Organization [custom]	36
Memory Organization [custom]	256 K
Memory Size	9 Mbit
Memory Type	Volatile
Mounting Type	Surface Mount
Operating Temperature [Max]	70 °C
Operating Temperature [Min]	0 °C
Package / Case	119-BGA
Supplier Device Package	119-PBGA (14x22)
Technology	SRAM - Synchronous, SDR
Voltage - Supply [Max]	3.465 V
Voltage - Supply [Min]	3.135 V

71V67602 Series

3.3V 256K x 36 Synchronous 2.5V I/O PipeLined SRAM

Part	Mounting Type	Memory Size	Operating Temperature [Max]	Operating Temperature [Min]	Technology	Supplier Device Package	Memory Organization [custom]	Memory Organization [custom]	Memory Type	Memory Format	Clock Frequency	Memory Interface	Voltage - Supply [Max]	Voltage - Supply [Min]	Package / Case	Access Time
Renesas Electronics Corporation 71V67602S166BGG8	Surface Mount	9 Mbit	70 °C	0 °C	SRAM - Synchronous SDR	119-PBGA (14x22)	36	256 K	Volatile	SRAM	166 MHz	Parallel	3.465 V	3.135 V	119-BGA
Renesas Electronics Corporation 71V67602S133PFG8	Surface Mount	9 Mbit	70 °C	0 °C	SRAM - Synchronous SDR	100-TQFP (14x14)	36	256 K	Volatile	SRAM	133 MHz	Parallel	3.465 V	3.135 V	100-LQFP	4.2 ns
Renesas Electronics Corporation 71V67602S133PFG	Surface Mount	9 Mbit	70 °C	0 °C	SRAM - Synchronous SDR	100-TQFP (14x14)	36	256 K	Volatile	SRAM	133 MHz	Parallel	3.465 V	3.135 V	100-LQFP	4.2 ns
Renesas Electronics Corporation 71V67602S150BGG8	Surface Mount	9 Mbit	70 °C	0 °C	SRAM - Synchronous SDR	119-PBGA (14x22)	36	256 K	Volatile	SRAM	150 MHz	Parallel	3.465 V	3.135 V	119-BGA	3.8 ns
Renesas Electronics Corporation 71V67602S133BGG	Surface Mount	9 Mbit	70 °C	0 °C	SRAM - Synchronous SDR	119-PBGA (14x22)	36	256 K	Volatile	SRAM	133 MHz	Parallel	3.465 V	3.135 V	119-BGA	4.2 ns
Renesas Electronics Corporation 71V67602S133PFGI8	Surface Mount	9 Mbit	85 °C	-40 °C	SRAM - Synchronous SDR	100-TQFP (14x14)	36	256 K	Volatile	SRAM	133 MHz	Parallel	3.465 V	3.135 V	100-LQFP	4.2 ns
Renesas Electronics Corporation 71V67602S166PFG	Surface Mount	9 Mbit	70 °C	0 °C	SRAM - Synchronous SDR	100-TQFP (14x14)	36	256 K	Volatile	SRAM	166 MHz	Parallel	3.465 V	3.135 V	100-LQFP
Renesas Electronics Corporation 71V67602S133PFGI	Surface Mount	9 Mbit	85 °C	-40 °C	SRAM - Synchronous SDR	100-TQFP (14x14)	36	256 K	Volatile	SRAM	133 MHz	Parallel	3.465 V	3.135 V	100-LQFP	4.2 ns
Renesas Electronics Corporation 71V67602S133BGG8	Surface Mount	9 Mbit	70 °C	0 °C	SRAM - Synchronous SDR	119-PBGA (14x22)	36	256 K	Volatile	SRAM	133 MHz	Parallel	3.465 V	3.135 V	119-BGA	4.2 ns
Renesas Electronics Corporation 71V67602S150PFGI8	Surface Mount	9 Mbit	85 °C	-40 °C	SRAM - Synchronous SDR	100-TQFP (14x14)	36	256 K	Volatile	SRAM	150 MHz	Parallel	3.465 V	3.135 V	100-LQFP	3.8 ns

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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Description

General part information

71V67602 Series

The 71V67602 3.3V CMOS SRAM is organized as 256K x 36. The 71V676 SRAM contains write, data, address and control registers. Internal logic allows the SRAM to generate a self-timed write based upon a decision which can be left until the end of the write cycle. The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM.

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