MBRT120150R
ObsoleteGeneSiC Semiconductor
DIODE MOD SCHOTT 150V 60A 3TOWER
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MBRT120150R
ObsoleteGeneSiC Semiconductor
DIODE MOD SCHOTT 150V 60A 3TOWER
Deep-Dive with AI
DocumentsDatasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | MBRT120150R |
|---|---|
| Current - Average Rectified (Io) (per Diode) | 60 A |
| Current - Reverse Leakage @ Vr | 1 mA |
| Diode Configuration | 1 Pair Common Anode |
| Mounting Type | Chassis Mount |
| Operating Temperature - Junction [Max] | 150 °C |
| Operating Temperature - Junction [Min] | -55 °C |
| Package / Case | Three Tower |
| Speed | 200 mA, 500 ns |
| Supplier Device Package | Three Tower |
| Technology | Schottky |
| Voltage - Forward (Vf) (Max) @ If | 880 mV |
MBRT120 Series
| Part | Technology | Mounting Type | Supplier Device Package | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Speed | Voltage - DC Reverse (Vr) (Max) [Max] | Package / Case | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Diode Configuration | Current - Average Rectified (Io) (per Diode) | Voltage - Forward (Vf) (Max) @ If [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GeneSiC Semiconductor | Schottky | Chassis Mount | Three Tower | 150 °C | -55 °C | 200 mA 500 ns | 200 V | Three Tower | 920 mV | 1 mA | 1 Pair Common Anode | 60 A | |
GeneSiC Semiconductor | Schottky | Chassis Mount | Three Tower | 150 °C | -55 °C | 200 mA 500 ns | 100 V | Three Tower | 880 mV | 1 mA | 1 Pair Common Cathode | 60 A | |
GeneSiC Semiconductor | Schottky | Chassis Mount | Three Tower | 150 °C | -55 °C | 200 mA 500 ns | Three Tower | 880 mV | 1 mA | 1 Pair Common Anode | 60 A | ||
GeneSiC Semiconductor | Schottky | Chassis Mount | Three Tower | 150 °C | -55 °C | 200 mA 500 ns | 20 V | Three Tower | 1 mA | 1 Pair Common Cathode | 60 A | 750 mV | |
GeneSiC Semiconductor | Schottky | Chassis Mount | Three Tower | 150 °C | -55 °C | 200 mA 500 ns | 20 V | Three Tower | 1 mA | 1 Pair Common Anode | 60 A | 750 mV | |
GeneSiC Semiconductor | Schottky | Chassis Mount | Three Tower | 150 °C | -55 °C | 200 mA 500 ns | 60 V | Three Tower | 800 mV | 1 mA | 1 Pair Common Cathode | 60 A | |
GeneSiC Semiconductor | Schottky | Chassis Mount | Three Tower | 150 °C | -55 °C | 200 mA 500 ns | 30 V | Three Tower | 1 mA | 1 Pair Common Cathode | 60 A | 750 mV | |
GeneSiC Semiconductor | Schottky | Chassis Mount | Three Tower | 150 °C | -55 °C | 200 mA 500 ns | 200 V | Three Tower | 920 mV | 1 mA | 1 Pair Common Cathode | 60 A | |
GeneSiC Semiconductor | Schottky | Chassis Mount | Three Tower | 150 °C | -55 °C | 200 mA 500 ns | 60 V | Three Tower | 800 mV | 1 mA | 1 Pair Common Anode | 60 A | |
GeneSiC Semiconductor | Schottky | Chassis Mount | Three Tower | 150 °C | -55 °C | 200 mA 500 ns | 80 V | Three Tower | 880 mV | 1 mA | 1 Pair Common Cathode | 60 A |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
MBRT120 Series
Diode Array 1 Pair Common Anode 150 V 60A Chassis Mount Three Tower
Documents
Technical documentation and resources