2STX1360-AP

Obsolete

STMicroelectronics

POWER BIPOLAR TRANSISTORS

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2STX1360-AP

Obsolete

STMicroelectronics

POWER BIPOLAR TRANSISTORS

Deep-Dive with AI

DocumentsDatasheet Datasheet

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	2STX1360-AP

Current - Collector (Ic) (Max) [Max]	3 A
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	160
Frequency - Transition	130 MHz
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-226-3, TO-92-3
Power - Max [Max]	1 W
Supplier Device Package	TO-92AP
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	500 mV
Voltage - Collector Emitter Breakdown (Max)	60 V

2STX Series

Part	Supplier Device Package	Voltage - Collector Emitter Breakdown (Max)	Mounting Type	Transistor Type	Operating Temperature	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Vce Saturation (Max) @ Ib, Ic	Frequency - Transition	Package / Case	Current - Collector (Ic) (Max) [Max]	Current - Collector Cutoff (Max) [Max]	Power - Max [Max]
STMicroelectronics 2STX1360	TO-92-3	60 V	Through Hole	NPN	150 °C	160	500 mV	130 MHz	TO-226-3 TO-92-3	3 A	100 nA	1 W
STMicroelectronics 2STX1360-AP	TO-92AP	60 V	Through Hole	NPN	150 °C	160	500 mV	130 MHz	TO-226-3 TO-92-3	3 A	100 nA	1 W

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

2STX Series

The devices are NPN transistors manufactured using new PB-HCD" (power bipolar high current density) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage."Very low collector-emitter saturation voltageHigh current gain characteristicFast-switching speed

Documents

Technical documentation and resources