1N3890R

Active

GeneSiC Semiconductor

DIODE GEN PURP REV 100V 12A DO4

Search across all available documentation for this part.

Active

GeneSiC Semiconductor

DIODE GEN PURP REV 100V 12A DO4

Technical Specifications

Parameters and characteristics for this part

Specification	1N3890R

Current - Average Rectified (Io)	12 A
Mounting Type	Chassis, Stud Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-65 C
Package / Case	Stud, DO-203AA, DO-4
Reverse Recovery Time (trr)	200 ns
Speed	200 mA, 500 ns
Supplier Device Package	DO-4
Technology	Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max) [Max]	100 V
Voltage - Forward (Vf) (Max) @ If	1.4 V

Part	Technology	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Average Rectified (Io)	Package / Case	Voltage - Forward (Vf) (Max) @ If	Reverse Recovery Time (trr)	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Mounting Type	Speed	Supplier Device Package
GeneSiC Semiconductor 1N3890R	Reverse Polarity Standard	100 V	12 A	DO-203AA DO-4 Stud	1.4 V	200 ns	150 °C	-65 C	Chassis Stud Mount	200 mA 500 ns	DO-4

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 100 V 12A Chassis, Stud Mount DO-4

Technical documentation and resources