SS1003EJ-TR

Obsolete

ON Semiconductor

DIODE ARR SCHOT 30V 1A 4ECSP1608

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Obsolete

ON Semiconductor

DIODE ARR SCHOT 30V 1A 4ECSP1608

Technical Specifications

Parameters and characteristics for this part

Specification	SS1003EJ-TR

Current - Average Rectified (Io) (per Diode)	1 A
Current - Reverse Leakage @ Vr	360 µA
Diode Configuration	2 Independent
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	125 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	4-UFDFN
Reverse Recovery Time (trr)	10 ns
Speed	200 mA, 500 ns
Supplier Device Package	4-ECSP1608
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	30 V
Voltage - Forward (Vf) (Max) @ If	450 mV

Part	Current - Average Rectified (Io) (per Diode)	Mounting Type	Technology	Diode Configuration	Current - Reverse Leakage @ Vr	Reverse Recovery Time (trr)	Voltage - Forward (Vf) (Max) @ If	Package / Case	Supplier Device Package	Voltage - DC Reverse (Vr) (Max) [Max]	Speed	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]
ON Semiconductor SS1003EJ-TR	1 A	Surface Mount	Schottky	2 Independent	360 µA	10 ns	450 mV	4-UFDFN	4-ECSP1608	30 V	200 mA 500 ns	-55 °C	125 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	3806	$ 0.08

General part information

Diode Array 2 Independent 30 V 1A Surface Mount 4-UFDFN

Technical documentation and resources

No documents available