KBP208

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GeneSiC Semiconductor

BRIDGE RECT 1PHASE 800V 2A KBP

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GeneSiC Semiconductor

BRIDGE RECT 1PHASE 800V 2A KBP

Technical Specifications

Parameters and characteristics for this part

Specification	KBP208

Current - Average Rectified (Io)	2 A
Current - Reverse Leakage @ Vr	10 µA
Diode Type	Single Phase
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-50 °C
Package / Case	4-SIP, KBP
Supplier Device Package	KBP
Technology	Standard
Voltage - Forward (Vf) (Max) @ If	1.1 V
Voltage - Peak Reverse (Max) [Max]	800 V

Part	Package / Case	Technology	Mounting Type	Voltage - Forward (Vf) (Max) @ If	Current - Average Rectified (Io)	Current - Reverse Leakage @ Vr	Operating Temperature [Max]	Operating Temperature [Min]	Voltage - Peak Reverse (Max) [Max]	Supplier Device Package	Diode Type
GeneSiC Semiconductor KBP208	4-SIP KBP	Standard	Through Hole	1.1 V	2 A	10 µA	150 °C	-50 °C	800 V	KBP	Single Phase
GeneSiC Semiconductor KBP208G	4-SIP KBP	Standard	Through Hole	1.1 V	2 A	10 µA	150 °C	-55 °C	800 V	KBP	Single Phase

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bridge Rectifier Single Phase Standard 800 V Through Hole KBP

Technical documentation and resources