ES3HB M4G

Unknown

Taiwan Semiconductor Corporation

DIODE GEN PURP 500V 3A DO214AA

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Unknown

Taiwan Semiconductor Corporation

DIODE GEN PURP 500V 3A DO214AA

Technical Specifications

Parameters and characteristics for this part

Specification	ES3HB M4G

Capacitance @ Vr, F	34 pF
Current - Average Rectified (Io)	3 A
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	SMB, DO-214AA
Reverse Recovery Time (trr)	35 ns
Speed	200 mA, 500 ns
Supplier Device Package	SMB
Supplier Device Package	DO-214AA
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	500 V
Voltage - Forward (Vf) (Max) @ If	1.45 V

Part	Current - Average Rectified (Io)	Technology	Reverse Recovery Time (trr)	Supplier Device Package	Supplier Device Package	Voltage - Forward (Vf) (Max) @ If	Speed	Capacitance @ Vr, F	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Package / Case	Mounting Type	Voltage - DC Reverse (Vr) (Max) [Max]
Taiwan Semiconductor Corporation ES3HB M4G	3 A	Standard	35 ns	SMB	DO-214AA	1.45 V	200 mA 500 ns	34 pF	150 °C	-55 °C	DO-214AA SMB	Surface Mount	500 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 500 V 3A Surface Mount DO-214AA (SMB)

Technical documentation and resources