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RV8C010UNHZGG2CR - DFN1010

RV8C010UNHZGG2CR

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Rohm Semiconductor

MOSFET N-CH 20V 1A DFN1010-3W

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RV8C010UNHZGG2CR - DFN1010

RV8C010UNHZGG2CR

Active
Rohm Semiconductor

MOSFET N-CH 20V 1A DFN1010-3W

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationRV8C010UNHZGG2CR
Current - Continuous Drain (Id) @ 25°C1 A
Drain to Source Voltage (Vdss)20 V
FET TypeN-Channel
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds40 pF
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / Case3-XFDFN
Power Dissipation (Max) [Max]1 W
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs470 mOhm
Supplier Device PackageDFN1010-3W
TechnologyMOSFET (Metal Oxide)
Vgs (Max)8 V
Vgs(th) (Max) @ Id1 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.58
10$ 0.50
100$ 0.35
500$ 0.27
1000$ 0.22
2000$ 0.20
Digi-Reel® 1$ 0.58
10$ 0.50
100$ 0.35
500$ 0.27
1000$ 0.22
2000$ 0.20
Tape & Reel (TR) 8000$ 0.19
16000$ 0.17
24000$ 0.17
56000$ 0.17

Description

General part information

RV8C010 Series

N-Channel 20 V 1A (Ta) 1W Surface Mount DFN1010-3W

Documents

Technical documentation and resources

No documents available