PJMP120N60EC_T0_00001

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Panjit International Inc.

600V SUPER JUNCTION MOSFET

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Panjit International Inc.

600V SUPER JUNCTION MOSFET

Technical Specifications

Parameters and characteristics for this part

Specification	PJMP120N60EC_T0_00001

Current - Continuous Drain (Id) @ 25°C	30 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	51 nC
Input Capacitance (Ciss) (Max) @ Vds	1960 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max) [Max]	235 W
Rds On (Max) @ Id, Vgs	120 mOhm
Supplier Device Package	TO-220AB-L
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4 V

Part	FET Type	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Vgs (Max)	Rds On (Max) @ Id, Vgs	Supplier Device Package	Power Dissipation (Max) [Max]	Technology	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]
Panjit International Inc. PJMP120N60EC_T0_00001	N-Channel	600 V	4 V	-55 °C	150 °C	30 A	Through Hole	30 V	120 mOhm	TO-220AB-L	235 W	MOSFET (Metal Oxide)	TO-220-3	1960 pF	10 V	51 nC

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General part information

N-Channel 600 V 30A (Tc) 235W (Tc) Through Hole TO-220AB-L

Technical documentation and resources