TPH1R104PB,L1XHQ

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Toshiba Semiconductor and Storage

MOSFET N-CH 40V 120A 8SOP

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Toshiba Semiconductor and Storage

MOSFET N-CH 40V 120A 8SOP

Technical Specifications

Parameters and characteristics for this part

Specification	TPH1R104PB,L1XHQ

Current - Continuous Drain (Id) @ 25°C	120 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	55 nC
Input Capacitance (Ciss) (Max) @ Vds	4560 pF
Mounting Type	Surface Mount
Operating Temperature	175 °C
Package / Case	8-PowerVDFN
Power Dissipation (Max)	132 W, 960 mW
Rds On (Max) @ Id, Vgs	1.14 mOhm
Supplier Device Package	8-SOP Advance (5x5)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

Part	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Technology	FET Type	Operating Temperature	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Vgs (Max)	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Drain to Source Voltage (Vdss)
Toshiba Semiconductor and Storage TPH1R104PB,L1XHQ	3 V	120 A	MOSFET (Metal Oxide)	N-Channel	175 °C	132 W 960 mW	4560 pF	1.14 mOhm	55 nC	8-PowerVDFN	20 V	8-SOP Advance (5x5)	6 V 10 V	Surface Mount	40 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 40 V 120A (Ta) 960mW (Ta), 132W (Tc) Surface Mount 8-SOP Advance (5x5)

Technical documentation and resources