2SK3812-ZP-E1-AZ

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Renesas Electronics Corporation

NCH POWER MOSFET 60V 110A 2.8MOHM TO-263 / D2PAK

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Renesas Electronics Corporation

NCH POWER MOSFET 60V 110A 2.8MOHM TO-263 / D2PAK

Technical Specifications

Parameters and characteristics for this part

Specification	2SK3812-ZP-E1-AZ

Current - Continuous Drain (Id) @ 25°C	110 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	16800 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	1.5 W, 213 W
Rds On (Max) @ Id, Vgs	2.8 mOhm
Supplier Device Package	TO-263-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id [Max]	2.5 V

Nch Power MOSFET 60V 110A 2.8mohm TO-263 / D2PAK

Part	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id [Max]	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature	FET Type	Package / Case	Mounting Type	Supplier Device Package	Technology	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Drain to Source Voltage (Vdss)
Renesas Electronics Corporation 2SK3812-ZP-E1-AZ	4.5 V 10 V	2.5 V	1.5 W 213 W	16800 pF	150 °C	N-Channel	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	Surface Mount	TO-263-3	MOSFET (Metal Oxide)	2.8 mOhm	110 A	20 V	60 V

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General part information

The 2SK3812 is N-channel MOS Field Effect Transistor designed for high current switching applications.