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BYG20J R3G - PE1DAH

BYG20J R3G

Unknown
Taiwan Semiconductor Corporation

DIODE GEN PURP 600V 1.5A DO214AC

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BYG20J R3G - PE1DAH

BYG20J R3G

Unknown
Taiwan Semiconductor Corporation

DIODE GEN PURP 600V 1.5A DO214AC

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationBYG20J R3G
Current - Average Rectified (Io)1.5 A
Current - Reverse Leakage @ Vr1 µA
Mounting TypeSurface Mount
Operating Temperature - Junction [Max]150 °C
Operating Temperature - Junction [Min]-55 °C
Package / CaseDO-214AC, SMA
Reverse Recovery Time (trr)75 ns
Speed200 mA, 500 ns
Supplier Device PackageDO-214AC (SMA)
TechnologyStandard
Voltage - DC Reverse (Vr) (Max) [Max]600 V
Voltage - Forward (Vf) (Max) @ If1.4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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Description

General part information

BYG20 Series

Diode 600 V 1.5A Surface Mount DO-214AC (SMA)

Documents

Technical documentation and resources

No documents available