RSD221N06TL

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Rohm Semiconductor

MOSFET N-CH 60V 22A CPT3

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Rohm Semiconductor

MOSFET N-CH 60V 22A CPT3

Technical Specifications

Parameters and characteristics for this part

Specification	RSD221N06TL

Current - Continuous Drain (Id) @ 25°C	22 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	4 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	30 nC
Input Capacitance (Ciss) (Max) @ Vds	1500 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	850 mW, 20 W
Rds On (Max) @ Id, Vgs	26 mOhm
Supplier Device Package	CPT3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

Part	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Mounting Type	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Technology	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	FET Type	Operating Temperature	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package
Rohm Semiconductor RSD221N06TL	3 V	60 V	Surface Mount	DPAK (2 Leads + Tab) SC-63 TO-252-3	30 nC	4 V	10 V	MOSFET (Metal Oxide)	20 W 850 mW	22 A	26 mOhm	N-Channel	150 °C	20 V	1500 pF	CPT3

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 60 V 22A (Tc) 850mW (Ta), 20W (Tc) Surface Mount CPT3

Technical documentation and resources