GB02SLT12-214

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GeneSiC Semiconductor

DIODE SCHOTTKY SIC 1.2KV 2A 2-PIN SMB

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GeneSiC Semiconductor

DIODE SCHOTTKY SIC 1.2KV 2A 2-PIN SMB

Technical Specifications

Parameters and characteristics for this part

Specification	GB02SLT12-214

Capacitance @ Vr, F	131 pF
Current - Average Rectified (Io)	2 A
Current - Reverse Leakage @ Vr	50 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	SMB, DO-214AA
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Supplier Device Package	DO-214AA
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	1.2 kV
Voltage - Forward (Vf) (Max) @ If	1.8 V

Part	Speed	Voltage - DC Reverse (Vr) (Max) [Max]	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Capacitance @ Vr, F	Package / Case	Technology	Mounting Type	Voltage - Forward (Vf) (Max) @ If	Current - Reverse Leakage @ Vr	Current - Average Rectified (Io)	Reverse Recovery Time (trr)	Supplier Device Package
GeneSiC Semiconductor GB02SLT12-214	No Recovery Time	1.2 kV	175 ░C	-55 C	131 pF	DO-214AA SMB	SiC (Silicon Carbide) Schottky	Surface Mount	1.8 V	50 µA	2 A	0 ns	DO-214AA
GeneSiC Semiconductor GB02SLT12-252	No Recovery Time	1.2 kV	175 ░C	-55 C	131 pF	DPAK (2 Leads + Tab) SC-63 TO-252-3	SiC (Silicon Carbide) Schottky	Surface Mount	1.8 V	50 µA	5 A	0 ns	TO-252

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General part information

Diode 1200 V 2A Surface Mount DO-214AA

Technical documentation and resources