2SC2712-GR,LF

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Toshiba Semiconductor and Storage

TRANS NPN 50V 0.15A SMINI

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Toshiba Semiconductor and Storage

TRANS NPN 50V 0.15A SMINI

Technical Specifications

Parameters and characteristics for this part

Specification	2SC2712-GR,LF

Current - Collector (Ic) (Max) [Max]	150 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	70 hFE
Mounting Type	Surface Mount
Operating Temperature	125 ¯C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power - Max [Max]	150 mW
Supplier Device Package	S-Mini
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	250 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

Part	Voltage - Collector Emitter Breakdown (Max) [Max]	Power - Max [Max]	Mounting Type	Current - Collector Cutoff (Max) [Max]	Package / Case	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Vce Saturation (Max) @ Ib, Ic	Transistor Type	Supplier Device Package	Current - Collector (Ic) (Max) [Max]	Operating Temperature
Toshiba Semiconductor and Storage 2SC2712-GR,LF	50 V	150 mW	Surface Mount	100 nA	SC-59 SOT-23-3 TO-236-3	70 hFE	250 mV	NPN	S-Mini	150 mA	125 ¯C
Toshiba Semiconductor and Storage 2SC2712-BL,LF	50 V	150 mW	Surface Mount	100 nA	SC-59 SOT-23-3 TO-236-3	70 hFE	250 mV	NPN	S-Mini	150 mA	125 ¯C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bipolar (BJT) Transistor NPN 50 V 150 mA 80MHz 150 mW Surface Mount S-Mini

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