GP1005

Unknown

Taiwan Semiconductor Corporation

DIODE ARRAY GP 600V 10A TO220AB

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Unknown

Taiwan Semiconductor Corporation

DIODE ARRAY GP 600V 10A TO220AB

Technical Specifications

Parameters and characteristics for this part

Specification	GP1005

Current - Average Rectified (Io) (per Diode)	10 A
Current - Reverse Leakage @ Vr	2 µA
Diode Configuration	1 Pair Common Cathode
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	TO-220-3
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	TO-220AB
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	1.1 V

Part	Current - Reverse Leakage @ Vr	Technology	Speed	Speed	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Voltage - Forward (Vf) (Max) @ If	Package / Case	Current - Average Rectified (Io) (per Diode)	Supplier Device Package	Voltage - DC Reverse (Vr) (Max) [Max]	Diode Configuration	Mounting Type
Taiwan Semiconductor Corporation GP1005	2 µA	Standard	Standard Recovery >500ns	200 mA	150 °C	-55 °C	1.1 V	TO-220-3	10 A	TO-220AB	600 V	1 Pair Common Cathode	Through Hole

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode Array 1 Pair Common Cathode 600 V 10A Through Hole TO-220-3

Technical documentation and resources