AOWF095A60

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Alpha & Omega Semiconductor Inc.

MOSFET N-CH 600V 38A TO262F

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Alpha & Omega Semiconductor Inc.

MOSFET N-CH 600V 38A TO262F

Technical Specifications

Parameters and characteristics for this part

Specification	AOWF095A60

Current - Continuous Drain (Id) @ 25°C	38 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	78 nC
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-262AA, TO-262-3 Long Leads, I2PAK
Power Dissipation (Max)	34.5 W
Rds On (Max) @ Id, Vgs [Max]	95 mOhm
Supplier Device Package	TO-262F
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

Part	FET Type	Power Dissipation (Max)	Technology	Mounting Type	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Drain to Source Voltage (Vdss)	Package / Case	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]
Alpha & Omega Semiconductor Inc. AOWF095A60	N-Channel	34.5 W	MOSFET (Metal Oxide)	Through Hole	3 V	10 V	95 mOhm	78 nC	38 A	20 V	600 V	I2PAK TO-262-3 Long Leads TO-262AA	TO-262F	-55 °C	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1000	$ 2.69

General part information

N-Channel 600 V 38A (Tj) 34.5W (Tc) Through Hole TO-262F

Technical documentation and resources