GPAS1005

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Taiwan Semiconductor Corporation

DIODE GEN PURP 600V 10A TO263AB

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Taiwan Semiconductor Corporation

DIODE GEN PURP 600V 10A TO263AB

Technical Specifications

Parameters and characteristics for this part

Specification	GPAS1005

Capacitance @ Vr, F	50 pF
Current - Average Rectified (Io)	10 A
Current - Reverse Leakage @ Vr	5 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	TO-263AB (D2PAK)
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	1.1 V

Part	Capacitance @ Vr, F	Voltage - DC Reverse (Vr) (Max) [Max]	Voltage - Forward (Vf) (Max) @ If	Current - Reverse Leakage @ Vr	Mounting Type	Speed	Speed	Package / Case	Supplier Device Package	Technology	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Current - Average Rectified (Io)
Taiwan Semiconductor Corporation GPAS1005	50 pF	600 V	1.1 V	5 µA	Surface Mount	Standard Recovery >500ns	200 mA	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	TO-263AB (D2PAK)	Standard	150 °C	-55 °C	10 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 600 V 10A Surface Mount TO-263AB (D2PAK)

Technical documentation and resources