C3D10060G-TR

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Wolfspeed

DIODE SIL CARB 600V 29A TO263-2

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Wolfspeed

DIODE SIL CARB 600V 29A TO263-2

Technical Specifications

Parameters and characteristics for this part

Specification	C3D10060G-TR

Capacitance @ Vr, F	480 pF
Current - Average Rectified (Io)	29 A
Current - Reverse Leakage @ Vr	50 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Speed	200 mA, 500 ns
Supplier Device Package	TO-263-2
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	1.8 V

Part	Supplier Device Package	Voltage - DC Reverse (Vr) (Max) [Max]	Mounting Type	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Package / Case	Reverse Recovery Time (trr)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Capacitance @ Vr, F	Technology	Current - Reverse Leakage @ Vr	Speed
Wolfspeed C3D10060G	TO-263-2	600 V	Surface Mount	175 ░C	-55 C	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	0 ns	29 A	1.8 V	No Recovery Time	480 pF	SiC (Silicon Carbide) Schottky	50 µA
Wolfspeed C3D10060G-TR	TO-263-2	600 V	Surface Mount	175 ░C	-55 C	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB		29 A	1.8 V		480 pF	SiC (Silicon Carbide) Schottky	50 µA	200 mA 500 ns

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General part information

Diode 600 V 29A Surface Mount TO-263-2

Technical documentation and resources