EPC7007BC

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EPC Space, LLC

GAN FET HEMT200V18A COTS 4FSMD-B

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EPC Space, LLC

GAN FET HEMT200V18A COTS 4FSMD-B

Technical Specifications

Parameters and characteristics for this part

Specification	EPC7007BC

Current - Continuous Drain (Id) @ 25°C	18 A
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On)	5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	7 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	900 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	4-SMD, No Lead
Rds On (Max) @ Id, Vgs	28 mOhm
Supplier Device Package	4-SMD
Technology	MOSFET (Metal Oxide)
Vgs (Max) [Max]	6 V
Vgs (Max) [Min]	-4 V
Vgs(th) (Max) @ Id	2.5 V

Part	Package / Case	Current - Continuous Drain (Id) @ 25°C	Technology	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	FET Type	Rds On (Max) @ Id, Vgs	Mounting Type	Vgs (Max) [Max]	Vgs (Max) [Min]	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]
EPC Space, LLC EPC7007BC	4-SMD No Lead	18 A	MOSFET (Metal Oxide)	200 V	2.5 V	N-Channel	28 mOhm	Surface Mount	6 V	-4 V	-55 °C	150 °C	4-SMD	5 V	900 pF	7 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 200 V 18A (Tc) Surface Mount 4-SMD

Technical documentation and resources