2SB1481(TOJS,Q,M)

Obsolete

Toshiba Semiconductor and Storage

TRANS PNP 100V 4A TO220NIS

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Obsolete

Toshiba Semiconductor and Storage

TRANS PNP 100V 4A TO220NIS

Technical Specifications

Parameters and characteristics for this part

Specification	2SB1481(TOJS,Q,M)

Current - Collector (Ic) (Max) [Max]	4 A
Current - Collector Cutoff (Max) [Max]	2 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	2000
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3 Full Pack
Power - Max [Max]	2 W
Supplier Device Package	TO-220NIS
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	1.5 V
Voltage - Collector Emitter Breakdown (Max) [Max]	100 V

Part	Operating Temperature	Package / Case	Current - Collector (Ic) (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Transistor Type	Vce Saturation (Max) @ Ib, Ic	Supplier Device Package	Mounting Type	Current - Collector Cutoff (Max) [Max]	Power - Max [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]
Toshiba Semiconductor and Storage 2SB1481(TOJS,Q,M)	150 °C	TO-220-3 Full Pack	4 A	2000	PNP	1.5 V	TO-220NIS	Through Hole	2 µA	2 W	100 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Bipolar (BJT) Transistor PNP 100 V 4 A 2 W Through Hole TO-220NIS

Technical documentation and resources