DHG10I1800PA

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IXYS

DIODE GEN PURP 1.8KV 10A TO220AC

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IXYS

DIODE GEN PURP 1.8KV 10A TO220AC

Technical Specifications

Parameters and characteristics for this part

Specification	DHG10I1800PA

Capacitance @ Vr, F	3 pF
Current - Average Rectified (Io)	10 A
Current - Reverse Leakage @ Vr	50 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	TO-220-2
Reverse Recovery Time (trr)	300 ns
Speed	200 mA, 500 ns
Supplier Device Package	TO-220AC
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	1800 V
Voltage - Forward (Vf) (Max) @ If	2.23 V

Part	Voltage - Forward (Vf) (Max) @ If	Package / Case	Reverse Recovery Time (trr)	Mounting Type	Current - Average Rectified (Io)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max) [Max]	Speed	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Supplier Device Package	Technology	Capacitance @ Vr, F	Diode Configuration	Current - Average Rectified (Io) (per Diode)
IXYS DHG10I600PM	2.35 V	TO-220-2 Full Pack Isolated Tab	35 ns	Through Hole	10 A	15 µA	600 V	200 mA 500 ns	150 °C	-55 °C	TO-220FP	Standard
IXYS DHG10I1800PA	2.23 V	TO-220-2	300 ns	Through Hole	10 A	50 µA	1800 V	200 mA 500 ns	150 °C	-55 °C	TO-220AC	Standard	3 pF
IXYS DHG10I600PA	2.35 V	TO-220-2	35 ns	Through Hole	10 A	15 µA	600 V	200 mA 500 ns	150 °C	-55 °C	TO-220AC	Standard
IXYS DHG10I1200PA	2.22 V	TO-220-2	200 ns	Through Hole	10 A	15 µA	1.2 kV	200 mA 500 ns	150 °C	-55 °C	TO-220AC	Standard
IXYS DHG10C600PB	2.2 V	TO-220-3	35 ns	Through Hole		10 µA	600 V	200 mA 500 ns	150 °C	-55 °C	TO-220-3	Standard		1 Pair Common Cathode	5 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 1800 V 10A Through Hole TO-220AC

Technical documentation and resources

No documents available