CP611-2N6107-CM

Obsolete

Central Semiconductor Corp

TRANSISTOR

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Obsolete

Central Semiconductor Corp

TRANSISTOR

Technical Specifications

Parameters and characteristics for this part

Specification	CP611-2N6107-CM

Current - Collector (Ic) (Max) [Max]	7 A
Current - Collector Cutoff (Max) [Max]	1 mA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	30 hFE
Frequency - Transition	4 MHz
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-65 °C
Package / Case	Die
Power - Max [Max]	40 W
Supplier Device Package	Die
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	3.5 V
Voltage - Collector Emitter Breakdown (Max) [Max]	70 V

Part	Current - Collector (Ic) (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Supplier Device Package	Transistor Type	Vce Saturation (Max) @ Ib, Ic	Package / Case	Frequency - Transition	Power - Max [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector Cutoff (Max) [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Mounting Type
Central Semiconductor Corp CP611-2N6107-CT	7 A	70 V	Die	PNP	3.5 V	Die	4 MHz	40 W	30 hFE	1 mA	150 °C	-65 °C	Surface Mount
Central Semiconductor Corp CP611-2N6107-CM	7 A	70 V	Die	PNP	3.5 V	Die	4 MHz	40 W	30 hFE	1 mA	150 °C	-65 °C	Surface Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Bipolar (BJT) Transistor PNP 70 V 7 A 4MHz 40 W Surface Mount Die

Technical documentation and resources